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Features
* * * * * * * * * * * * * * * * *
Operating Range from 5V to 27V Baud Rate up to 20Kbaud Improved Slew Rate Control According to LIN Specification 2.0, 2.1 and SAEJ2602-2 Fully Compatible with 3.3V and 5V Devices Atmel ATA6663: TXD Time-out Timer, Atmel ATA6664: No TXD Time-out Timer Normal and Sleep Mode Wake-up Capability via LIN Bus (90s Dominant) External Wake-up via WAKE Pin (35s Low Level) INH Output to Control an External Voltage Regulator or to Switch the Master Pull-up Very Low Standby Current During Sleep Mode (10A) Wake-up Source Recognition Bus Pin Short-circuit Protected versus GND and Battery LIN Input Current < 2A if VBAT Is Disconnected Overtemperature Protection High EMC Level Interference and Damage Protection According to ISO/CD 7637 Fulfills the OEM "Hardware Requirements for LIN in Automotive Applications Rev.1.1"
LIN Transceiver Atmel ATA6663 Atmel ATA6664
1. Description
The Atmel ATA6663 is a fully integrated LIN transceiver complying with the LIN specification 2.0, 2.1 and SAEJ2602-2. The Atmel ATA6664 is an identical version, the only difference is that the TXD-dominant Time-out function is disabled so the device is able to send a static low signal to the LIN bus. It interfaces the LIN protocol handler and the physical layer. The device is designed to handle the low-speed data communication in vehicles, for example, in convenience electronics. Improved slope control at the LIN bus ensures secure data communication at up to 20Kbaud with an RC oscillator for protocol handling. Sleep Mode guarantees minimal current consumption even in the case of a floating bus line or a short circuit on the LIN bus to GND. The ATA6663/ATA6664 feature advanced EMI and ESD performance.
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Figure 1-1.
Block Diagram
7 Receiver RXD 1 VS
Filter
6
LIN
Wake-up bus timer TXD time-out timer
(only ATA6663)
Short-circuit and overtemperature protection
TXD
4
Slew rate control
VS VS Control unit Wake-up timer Sleep mode 5 GND
WAKE
3
2 EN
8 INH
2. Pin Configuration
Figure 2-1. Pinning SO8
RXD EN WAKE TXD 1 2 3 4 8 7 6 5 INH VS LIN GND
Table 2-1.
Pin 1 2 3 4 5 6 7 8
Pin Description
Symbol RXD EN WAKE TXD GND LIN VS INH Function Receive data output (open drain) Enables normal mode; when the input is open or low, the device is in sleep mode High voltage input for local wake-up request. If not needed, connect directly to VS Transmit data input; active low output (strong pull-down) after a local wake-up request Ground, heat sink LIN bus line input/output Battery supply Battery-related inhibit output for controlling an external voltage regulator or to switch-off the LIN master pull-up resistor; active high after a wake-up request
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3. Functional Description
3.1 Physical Layer Compatibility
Since the LIN physical layer is independent from higher LIN layers (e.g., the LIN protocol layer), all nodes with a LIN physical layer according to LIN2.x can be used along with LIN physical layer nodes, which are according to older versions (i.e., LIN1.0, LIN1.1, LIN1.2, LIN1.3), without any restrictions.
3.2
Supply Pin (VS)
Undervoltage detection is implemented to disable transmission if VS falls to a value below 5V in order to avoid false bus messages. After switching on VS, the IC switches to fail-safe mode and INHIBIT is switched on. The supply current in sleep mode is typically 10A.
3.3
Ground Pin (GND)
The Atmel ATA6663/ATA6664 does not affect the LIN Bus in the case of a GND disconnection. It is able to handle a ground shift up to 11.5% of VS.
3.4
Bus Pin (LIN)
A low-side driver with internal current limitation and thermal shutdown, and an internal pull-up resistor are implemented as specified by LIN2.x. The voltage range is from -27V to +40V. This pin exhibits no reverse current from the LIN bus to VS, even in the case of a GND shift or VBatt disconnection. The LIN receiver thresholds are compatible to the LIN protocol specification.The fall time (from recessive to dominant) and the rise time (from dominant to recessive) are slope controlled. The output has a self-adapting short-circuit limitation: During current limitation, as the chip temperature increases, the current is reduced.
Note: The internal pull-up resistor is only active in normal and fail-safe mode.
3.5
Input/Output Pin (TXD)
In Normal Mode the TXD pin is the microcontroller interface to control the state of the LIN output. TXD must be at Low- level in order to have a low LIN Bus. If TXD is high, the LIN output transistor is turned off and the Bus is in recessive state. The TXD pin is compatible to both a 3.3V or 5V supply. During fail-safe Mode, this pin is used as output and is signalling the wakeup source (see Section 3.14 "Wake-up Source Recognition" on page 8). It is current limited to < 8mA.
3.6
TXD Dominant Time-out Function (only Atmel ATA6663)
The TXD input has an internal pull-down resistor. An internal timer prevents the bus line from being driven permanently in dominant state. If TXD is forced to low longer than tDOM > 40ms, the pin LIN will be switched off (recessive mode). To reset this mode, TXD needs to be switched to high (> 10s) before switching LIN to dominant again.
Note: The ATA6664 does not provide this functionality.
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3.7
Output Pin (RXD)
This pin forwards information on the state of the LIN bus to the microcontroller. LIN high (recessive) is indicated by a high level at RXD, LIN low (dominant) is reported by a low voltage at RXD. The output is an open drain, therefore, it is compatible to a 3.3V or 5V power supply. The AC characteristics are defined by a pull-up resistor of 5k to 5V and a load capacitor of 20pF. The output is short-current protected. In unpowered mode (VS = 0V), RXD is switched off. For ESD protection a Zener diode with VZ = 6.1V is integrated.
3.8
Enable Input Pin (EN)
This pin controls the operation mode of the device. If EN = 1, the device is in normal mode, with the transmission path from TXD to LIN and from LIN to RXD both active. At a falling edge on EN, while TXD is already set to high, the device switches to sleep mode and transmission is not possible. In sleep mode, the LIN bus pin is connected to VS with a weak pull-up current source. The device can transmit only after being woken up (see Section 3.9, "Inhibit Output Pin (INH)" ). During sleep mode the device is still supplied from the battery voltage. The supply current is typically 10A. The pin EN provides a pull-down resistor in order to force the transceiver into sleep mode in case the pin is disconnected.
3.9
Inhibit Output Pin (INH)
This pin is used to control an external voltage regulator or to switch on/off the LIN Master pull-up resistor in case the device is used in a Master node. The inhibit pin provides an internal switch towards pin VS which is protected by temperature monitoring. If the device is in normal or fail-safe mode, the inhibit high-side switch is turned on. When the device is in sleep mode, the inhibit switch is turned off, thus disabling the voltage regulator or other connected external devices. A wake-up event on the LIN bus or at pin WAKE will switch the INH pin to the VS level. After a system power-up (VS rises from zero), the pin INH switches automatically to the VS level.
3.10
Wake-up Input Pin (WAKE)
This pin is a high-voltage input used to wake-up the device from sleep mode. It is usually connected to an external switch in the application to generate a local wake-up. A pull-up current source with typically -10A is implemented. The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically -3A. If a local wake-up is not needed in the application, pin WAKE can directly be connected to pin VS.
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3.11 Operation Modes
1. Normal Mode This is the normal transmitting and receiving mode. All features are available. 2. Sleep Mode In this mode the transmission path is disabled and the device is in low-power mode. Supply current from VBatt is typically 10A. A wake-up signal from the LIN bus or via pin WAKE will be detected and will switch the device to fail-safe mode. If EN then switches to high, normal mode is activated. Input debounce timers at pin WAKE (tWAKE), LIN (tBUS) and EN (tsleep,tnom) prevent unwanted wake-up events due to automotive transients or EMI. In sleep mode the INH pin remains floating. The internal termination between pin LIN and pin VS is disabled. Only a weak pull-up current (typical 10 A) between pin LIN and pin VS is present. Sleep mode can be activated independently from the actual level on pin LIN or WAKE. 3. Fail-safe Mode At system power-up or after a wake-up event, the device automatically switches to fail-safe mode. It switches the INH pin to a high state, to the VS level when VS exceeds 5V. LIN communication is switched off. The microcontroller of the application will then confirm normal mode by setting the EN pin to high. Figure 3-1. Mode of Operation
Power-up a a: Power-up (VS > 3V) b: VS < 5V c: Bus wake-up event d: Wake-up from wake switch
b
Fail-safe Mode Communication: OFF RXD: see table of Modes INH: high (INH HS switch ON) if VS > 5V
b
EN = 1 & NOT b
c or d
Go to sleep command EN = 0 Normal Mode INH: high (INH HS switch ON) Communication: ON Local wake-up event EN = 1 Sleep Mode INH: high impedance (INH HS switch OFF) Communication: OFF
Table 3-1.
Fail-safe Normal Sleep
Table of Operation Modes
Transceiver Off On Off INH On, except VS < 5V On Off RXD High, except after wake-up LIN depending High ohmic LIN Recessive TXD depending Recessive
Mode of Operation
Wake-up events from sleep mode: * LIN bus * EN pin * WAKE pin * VS undervoltage Figure 3-1 on page 5, Figure 3-2 on page 6 and Figure 3-5 on page 8 show the details of wake-up operations.
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3.12
Remote Wake-up via Dominant Bus State
A voltage lower than the LIN pre-wake detection VLINL at pin LIN activates the internal LIN receiver and starts the wake-up detection timer. A falling edge at pin LIN, followed by a dominant bus level VBUSdom maintained for a certain time period (tBUS) and a rising edge at pin LIN results in a remote wake-up request. The device switches to fail-safe mode. Pin INH is activated (switches to VS) and the internal termination resistor is switched on. The remote wake-up request is indicated by a low level at pin RXD to interrupt the microcontroller (see Figure 3-2). Figure 3-2. LIN Wake-up Waveform Diagram
Bus wake-up filtering time (tBUS) LIN bus
INH Low or floating
High
RXD
High or floating Low
External voltage regulator
Off state Regulator wake-up time delay Normal Mode EN High Node in sleep state Microcontroller start-up delay time
EN
In sleep mode the device has a very low current consumption, even during short-circuits or floating conditions on the bus. A floating bus can arise if the Master pull-up resistor is missing, e.g., in case it is switched off when the LIN Master is in sleep mode or if the power supply of the Master node is switched off. To minimize the current consumption IVS during voltage levels at the LIN-pin below the LIN pre-wake threshold, the receiver is activated only for a specific time tmon. If tmon elapses while the voltage at the bus is lower than pre-wake detection low (VLINL) and higher than the LIN dominant level, the receiver is switched off again and the circuit reverts to sleep mode. The current consumption is then the result of IVSsleep plus ILINwake. If a dominant state is reached on the bus no wake-up will occur. Even if the voltage exceeds the pre-wake detection high (VLINH), the IC will remain in sleep mode (see Figure 3-3 on page 7). This means the LIN bus must be above the Pre-wake detection threshold VLINH for a few microseconds before a new LIN wake-up is possible.
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Figure 3-3. Floating LIN Bus During Sleep Mode
LIN Pre-wake VLINL LIN BUS LIN dominant state VBUSdom
tmon IVSfail IVSsleep + ILINwake IVSsleep
IVS
IVSsleep
Mode of operation Int. Pull-up Resistor RLIN
Sleep Mode
Wake-up Detection Phase
Sleep Mode
off (disabled)
If the Atmel(R) ATA6663/ATA6664 is in sleep mode and the voltage level at the LIN is in dominant state (VLIN < VBUSdom) for a time period exceeding tmon (during a short circuit at LIN, for example), the IC switches back to sleep mode. The VS current consumption then consists of IVSsleep plus ILINWAKE. After a positive edge at pin LIN the IC switches directly to fail-safe mode (see Figure 3-4). Figure 3-4. Short Circuit to GND on the LIN Bus During Sleep Mode
LIN Pre-wake LIN BUS VLINL LIN dominant state VBUSdom
tmon tmon
IVSfail
IVS
IVSsleep
IVSsleep + ILINwake
Mode of operation Int. Pull-up Resistor RLIN
Sleep Mode
Wake-up Detection Phase
Sleep Mode
Fail-Safe Mode
off (disabled)
on (enabled)
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3.13
Local Wake-up via Pin WAKE
A falling edge at pin WAKE, followed by a low level maintained for a certain time period (tWAKE), results in a local wake-up request. According to ISO7637, the wake-up time ensures that no transient creates a wake-up. The device then switches to fail-safe mode. Pin INH is activated (switches to V S ) and the internal termination resistor is switched on. The local wake-up request is indicated both by a low level at pin RXD to interrupt the microcontroller and by a strong pull-down at pin TXD (see Figure 3-5). The voltage threshold for a wake-up signal is 3V below the VS voltage with an output current of typically -3A. Even in case of a continuous low at pin WAKE it is possible to switch the IC into sleep mode via a low level at pin EN. The IC will remain in sleep mode for an unlimited time. To generate a new wake-up at pin WAKE, a high signal > 6 s is required. A negative edge then starts the wake-up filtering time again. Figure 3-5. Wake-up from Wake-up Switch
Wake pin
State change
INH
Low or floating
High
RXD
High or floating Low High
TXD
TXD weak pull-down resistor Wake filtering time tWAKE
TXD strong pull-down
Weak pull-down
Voltage regulator
On state Off state Node in operation EN High Node in sleep state Microcontroller start-up delay time
Regulator wake-up time delay EN
3.14
Wake-up Source Recognition
The device can distinguish between a local wake-up request (pin WAKE) and a remote wake-up request (LIN bus). The wake-up source can be read at pin TXD in fail-safe mode. If an external pull-up resistor (typically 5k) has been added on pin TXD to the power supply of the microcontroller, a high level indicates a remote wake-up request (weak pull-down at pin TXD), a low level indicates a local wake-up request (strong pull-down at pin TXD). The wake-up request flag (indicated at pin RXD) as well as the wake-up source flag (indicated at pin TXD) are reset immediately if the microcontroller sets pin EN to high (see Figure 3-2 on page 6 and Figure 3-5 on page 8).
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3.15 Fail-safe Features
* During a short-circuit at LIN to VBAT, the output limits the output current to IBUS_LIM. Due to the power dissipation, the chip temperature exceeds Toff, and the LIN output is switched off. The chip cools down, and after a hysteresis of Thys, it switches the output on again. * During a short-circuit from LIN to GND the IC can be switched to sleep mode, and even in this case the current consumption is lower than 45A. When the short-circuit has elapsed, the IC starts with a remote wake-up. * If the Atmel(R) ATA6663/ATA6664 is in sleep mode and a floating condition occurs on the bus, the IC switches back to sleep mode automatically. The current consumption is lower than 45A in this case. * The reverse current is < 2A at pin LIN during loss of VBAT. This is the best behavior for bus systems where some slave nodes are supplied from battery or ignition. * Pin EN provides a pull-down resistor to force the transceiver into sleep mode if EN is disconnected * Pin RXD is set floating if VBAT is disconnected * Pin TXD provides a pull-down resistor to provide a static low if TXD is disconnected * The INH output transistor is protected by temperature monitoring
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4. Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters VS - Continuous supply voltage Wake DC and transient voltage (with 2.7k serial resistor) - Transient voltage according to ISO7637 (coupling 1nF) Logic pins (RXD, TXD, EN) LIN - DC voltage - Transient voltage according to ISO7637 (coupling 1nF) INH - DC voltage ESD according to IBEE LIN EMC Test specification 1.0 according to IEC 61000-4-2 - Pin VS, LIN to GND - Pin WAKE (2.7k serial resistor) ESD HBM according to STM5.1 with 1.5k / 100pF - Pin VS, LIN, WAKE, INH to GND HBM ESD ANSI/ESD-STM5.1 JESD22-A114 AEC-Q100 (002) CDM ESD STM 5.3.1 Machine Model ESD AEC-Q100-Rev.F (003) Junction temperature Storage temperature Tj Tstg Symbol Min. -0.3 -3 -150 -0.3 -27 -150 -0.3 Typ. Max. +40 +40 +100 +5.5 +40 +100 VS + 0.3 Unit V V V V V V V
8 6 6
KV KV KV
3
KV
750 200 -40 -55 +150 +150
V V C C
5. Thermal Characteristics
Parameters Thermal resistance junction ambient Special heat sink at GND (pin 5) on PCB (fused lead frame to pin 5) Thermal shutdown Thermal shutdown hysteresis Symbol RthJA RthJA Toff Thys 150 5 80 165 10 180 20 Min. Typ. Max. 145 Unit K/W K/W C C
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6. Electrical Characteristics
5V < VS < 27V, Tj = -40C to +150C No. 1 1.1 Parameters VS Pin DC voltage range nominal Sleep mode VLIN > VS - 0.5V VS < 14V 1.2 Supply current in sleep mode Sleep mode, bus shorted to GND VLIN = 0V VS < 14V Bus recessive VS < 14V Supply current in normal mode 1.4 Bus dominant VS < 14V Total bus load > 500 Bus recessive VS < 14V 7 7 VS IVSsleep 5 13.5 10 27 20 V A A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
7
IVSsleep_sc
23
45
A
A
1.3
7
IVSrec IVSdom IVSfail VSth VSth VSth_hys 0.5 4 4.05 50
0.9
1.3
mA
A
7
1.2
2
mA
A
1.5 1.6 1.7 1.8 2 2.1 2.2 2.3 2.4 3 3.1 3.2 3.3 3.4 3.5 4 4.1 4.2 4.3 4.4
Supply current in fail-safe mode VS undervoltage threshold on VS undervoltage threshold off VS undervoltage threshold hysteresis RXD Output Pin (Open Drain) Low-level output sink current RXD saturation voltage High-level leakage current ESD Zener diode TXD Input Pin Low-level voltage input High-level voltage input Pull-down resistor Low-level leakage current Low-level output sink current EN Input Pin Low-level voltage input High-level voltage input Pull-down resistor Low-level input current
7 7 7 7
1.1 4.95 5 500
mA V V mV
A A A A
Normal mode VLIN = 0V, VRXD = 0.4V 5-k pull-up resistor to 5V Normal mode VLIN = VBAT, VRXD = 5V IRXD = 100A
1 1 1 1 4 4
IRXDL VsatRXD IRXDH VZRXD VTXDL VTXDH RTXD ITXD_leak ITXD
1.3
2.5
8 0.4
mA V A V V V k A mA
A A A A A A A A A
-3 5.8 -0.3 2 125 -3 1.3 2.5 250
+3 8.6 +0.8 7 600 +3 8
VTXD = 5V VTXD = 0V Fail-safe mode, local wake-up VTXD = 0.4V VLIN = VBAT
4 4 4
2 2 VEN = 5V VEN = 0V 2 2
VENL VENH REN IEN
-0.3 2 125 -3 250
+0.8 7 600 +3
V V k A
A A A A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = -40C to +150C No. 5 5.1 5.2 5.3 6 6.1 6.2 6.3 6.4 7 7.1 7.2 7.3 7.4 7.5 7.6 7.7 7.8 Parameters INH Output Pin High-level voltage Switch-on resistance between VS and INH Leakage current WAKE Pin High-level input voltage Low-level input voltage Wake pull-up current High-level leakage current LIN Bus Driver Driver recessive output voltage Driver dominant voltage VBUSdom_DRV_LoSUP Driver dominant voltage VBUSdom_DRV_HiSUP Driver dominant voltage VBUSdom_DRV_LoSUP Driver dominant voltage VBUSdom_DRV_HiSUP Pull-up resistor to VS Voltage drop at the serial diodes LIN current limitation VBUS = VBAT_max Input leakage current at the receiver, including pull-up resistor as specified Input leakage current Driver off VBUS = 0V, VS = 12V Driver off 8V < VBAT < 18V 8V < VBUS < 18V VBUS VBAT RLOAD = 500 / 1k VVS = 7V, Rload = 500 VVS = 18V, Rload = 500 VVS = 7V, Rload = 1000 VVS = 18V, Rload = 1000 The serial diode is mandatory In pull-up path with Rslave ISerDiode = 10mA 6 6 6 6 6 6 6 6 VBUSrec V_LoSUP V_HiSUP V_LoSUP_1k V_HiSUP_1k_ RLIN VSerDiode IBUS_LIM IBUS_PAS_dom 0.6 0.8 20 0.4 40 120 30 47 1.0 200 0.9 x VS VS 1.2 2 V V V V V k V mA A A A A A A D A IWAKE = typically -3A VS < 27V VS = 27V, VWAKE = 27V 3 3 3 3 VWAKEH VWAKEL IWAKE IWAKE VS - 1V -1V -30 -5 -10 +5 VS + 0.3V VS - 3.3V V V A A A A A A Normal or fail-safe mode IINH = -15mA Normal or fail-safe mode Sleep mode VINH = 0V/27V, VS = 27V 8 8 8 VINHH RINH IINHL -3 VS - 0.75 30 VS 50 +3 V A A A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
7.9
6
-1
mA
A
7.10
Leakage current LIN recessive
6
IBUS_PAS_rec
10
20
A
A
7.11
Leakage current at ground loss; control unit disconnected from GNDDevice = VS ground; loss of local ground must VBAT =12V not affect communication in the 0V < VBUS < 18V residual network
6
IBUS_NO_Gnd
-10
+0.5
+10
A
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = -40C to +150C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* Leakage current at loss of battery; node has to substain the VBAT disconnected current that can flow under this VSUP_Device = GND condition; bus must remain 0V < VBUS < 18V operational under this condition Capacitance on pin LIN to GND LIN Bus Receiver Center of receiver threshold Receiver dominant state Receiver recessive state Receiver input hysteresis Pre-wake detection LIN High-level input voltage Pre-wake detection LIN Low-level input voltage LIN Pre-wake pull-up current Internal Timers Dominant time for wake-up via LIN bus Time of low pulse for wake-up via pin WAKE Time delay for mode change from fail-safe mode to normal mode via pin EN Time delay for mode change from normal mode into sleep mode via pin EN Atmel ATA6663: TXD dominant time out time VLIN = 0V VWAKE = 0V VEN = 5V 6 3 tBUS tWAKE tnorm 30 7 90 35 150 50 s s A A Switches the LIN receiver on VS < 27V VLIN = 0V VBUS_CNT = (Vth_dom + Vth_rec) / 2 VEN = 5V VEN = 5V VHYS = Vth_rec - Vth_dom 6 6 6 6 6 6 6 VBUS_CNT VBUSdom VBUSrec VBUShys VLINH VLINL ILINWAKE 0.475 x VS -27 0.6 x VS 0.028 x VS VS - 2V -27V -30 -10 0.1 x VS 0.5 x VS 0.525 x VS 0.4 x VS 40 0.175 x VS VS + 0.3V VS - 3.3V V V V V V V A A A A A A A A
7.12
6
IBUS_NO_Bat
0.1
2
A
A
7.13 8 8.1 8.2 8.3 8.4 8.5 8.6 8.7 9 9.1 9.2
6
CLIN
20
pF
D
9.3
2
2
7
15
s
A
9.4
VEN = 0V VTXD = 0V
2
tsleep tdom tVS tmon
7
15
24
s
A
9.5 9.6 9.7
4 7, 8 6
40
60
85 200
ms s ms
A A A
Power-up delay between VS = 5V VVS = 5V until INH switches to high Monitoring time for wake-up via LIN bus
6
10
15
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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6. Electrical Characteristics (Continued)
5V < VS < 27V, Tj = -40C to +150C No. Parameters Test Conditions Pin Symbol Min. Typ. Max. Unit Type* LIN Bus Driver AC Parameter with Different Bus Loads Load 1 (small): 1nF, 1k ; Load 2 (large): 10nF, 500 ; RRXD = 5k ; CRXD = 20pF; Load 3 (medium): 6.8nF, 660 characterized on samples; 10.1 and 10.2 specifies the timing parameters for proper operation at 20Kbit/s, 10.3 and 10.4 at 10.4Kbit/s. THRec(max) = 0.744 x VS THDom(max) = 0.581 x VS VS = 7.0V to 18V tBit = 50s D1 = tbus_rec(min) / (2 x tBit) THRec(min) = 0.422 x VS THDom(min) = 0.284 x VS VS = 7.0V to 18V tBit = 50s D2 = tbus_rec(max) / (2 x tBit) THRec(max) = 0.778 x VS THDom(max) = 0.616 x VS VS = 7.0V to 18V tBit = 96s D3 = tbus_rec(min) / (2 x tBit) THRec(min) = 0.389 x VS THDom(min) = 0.251 x VS VS = 7.0V to 18V tBit = 96s D4 = tbus_rec(max) / (2 x tBit)
10
10.1
Duty cycle 1
6
D1
0.396
A
10.2
Duty cycle 2
6
D2
0.581
A
10.3
Duty cycle 3
6
D3
0.417
A
10.4
Duty cycle 4
6
D4
0.590
A
11 11.1
Receiver Electrical AC Parameters of the LIN Physical Layer LIN receiver, RXD load conditions: CRXD = 20pF, Rpull-up = 5k Propagation delay of receiver (see Figure 6-1 on page 15) Symmetry of receiver propagation delay rising edge minus falling edge trec_pd = max(trx_pdr , trx_pdf) VS = 7.0V to 18V trx_sym = trx_pdr - trx_pdf VS = 7.0V to 18V 1 trx_pd trx_sym -2 6 s A
11.2
1
+2
s
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
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Figure 6-1. Definition of Bus Timing Parameter
tBit TXD (Input to transmitting node) tBit tBit
tBus_dom(max)
tBus_rec(min)
THRec(max) VS (Transceiver supply of transmitting node) THDom(max) LIN Bus Signal THRec(min) THDom(min)
Thresholds of receiving node 1
Thresholds of receiving node 2
tBus_dom(min) RXD (Output of receiving node 1) trx_pdf(1)
tBus_rec(max)
trx_pdr(1)
RXD (Output of receiving node 2) trx_pdr(2) trx_pdf(2)
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Figure 6-2.
Application Circuit
Master node pull-up
VBAT
22 F
100 nF 12V 5V 1k
VDD
5 k
Atmel ATA6663/ATA6664
1 Receiver
VS
RXD
Microcontroller
Filter
6 LIN
Wake-up bus timer 4 TXD GND IO VS 10 k 2.7 k External switch WAKE 3 Wake-up timer TXD Time-out timer
(only ATA6663)
Slew rate control
Short-circuit and overtemperature protection 220 pF
VS Control unit Sleep mode 5 GND 2 EN 8 INH
16
Atmel ATA6663/ATA6664
9146D-AUTO-09/10
LIN sub bus
7
Atmel ATA6663/ATA6664
7. Ordering Information
Extended Type Number ATA6663-FAQW ATA6663-TAQY ATA6664-TAQY Package DFN8 SO8 SO8 Remarks LIN transceiver, Pb-free, 8k, taped and reeled LIN transceiver, Pb-free, 4k, taped and reeled LIN transceiver, Pb-free, 4k, taped and reeled
8. Package Information
Figure 8-1. SO8
Package: SO 8 Dimensions in mm 4.90.1 50.2 3.70.1
0.2
0.1+0.15
1.4
0.4 1.27 3.81
3.80.1 60.2
8
5
technical drawings according to DIN specifications
1 Drawing-No.: 6.541-5031.01-4 Issue: 1; 15.08.06
4
17
9146D-AUTO-09/10
Figure 8-2.
DFN8
Top View D 8 PIN 1 ID E
1
technical drawings according to DIN specifications
Dimensions in mm A1 Side View A3 A
Partially Plated Surface
Bottom View 1 4 E2 COMMON DIMENSIONS
(Unit of Measure = mm)
Symbol
MIN
0.8 0.0 0.15 2.9 2.35 2.9 1.55 0.35 0.25
NOM
0.9 0.02 0.2 3 2.4 3 1.6 0.4 0.28 0.65 BSC
MAX
1 0.05 0.25 3.1 2.45 3.1 1.65 0.45 0.35
NOTE
Z
8 e D2
5
A A1 A3 D D2 E
Z 10:1
L
E2 L b e
b
Package Drawing Contact: packagedrawings@atmel.com
TITLE Package: VQFN_3x3_8L Exposed pad 2.4x1.6
03/03/10 DRAWING NO. REV. 6.543-5165.02-4 1
18
Atmel ATA6663/ATA6664
9146D-AUTO-09/10
Atmel ATA6663/ATA6664
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. Revision No. 9146D-AUTO-09/10 9146C-AUTO-07/10 History * Section 7 "Ordering Information" on page 17 changed * Section 8 "Package Information" on pages 17 to 18 changed * Section 6 "Electrical Characteristics" numbers 9.4 and 9.5 on page 13 changed * Features changed * Headings 3.6 and 3.10: text changed * Abs.Max.Ratings table: row "ESD HBM acc. to STM5.1" changed
9146B-AUTO-05/10
19
9146D-AUTO-09/10
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